Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs

作者：Y. Lv, J. Mo, Xubo Song, Zezhao He, Wang Yuangang, Tan Xin, Zhou Xingye, G. Gu, Hongyu Guo, Zhihong Feng · 年份：2018 · DOI：10.1016/j.spmi.2018.03.013 · 被引用次数：26 · 研究领域：Materials Science