Proximity-induced negative magnetoresistance and anomalous Hall effect in monolayer graphene/CrSBr heterojunctions

作者：Bin 彬 Dai 戴, K. Zhu 祝, C. Bai 白, Yechao 烨超 Han 韩, Guojing 国静 Hu 胡, Ruwen 汝文 Wang 王, Senhao 森浩 Lv 吕, Haisen 海森 Liu 刘, Z. Zhao 赵, J. Lu 卢, H. Guo 郭, H. Yang 杨, Hong-Jun 鸿钧 Gao 高 · 发表于：Chinese Physics B · 年份：2026 · DOI：10.1088/1674-1056/ae64d4 · 研究领域：Physics

The integration of graphene with magnetic insulators to invoke the magnetic proximity effect provides a powerful route toward spintronic devices that preserve graphene’s exceptional transport characteristics. A persistent challenge, however, is the identification of magnetic substrates that are both air-stable and capable of forming high-quality van der Waals interfaces. Here, we present a magnetotransport investigation of monolayer graphene coupled to a layered A-type antiferromagnetic semiconductor CrSBr nanoflake, which is notable for its high Néel temperature (∼132 K) and outstanding environmental stability. High-quality heterojunctions are obtained via a dry-transfer technique to ensure an atomically clean interface. Pronounced negative magnetoresistance and anomalous Hall effect in graphene are observed, arising from the suppression of spin-disorder scattering induced by the proximity exchange field from the CrSBr layer. Moreover, the heterojunction exhibits clear two-frequency Shubnikov–de Haas oscillations, evidencing the emergence of Fermi surface reconstruction in the monolayer graphene. Our results demonstrate that antiferromagnetic CrSBr can impose a robust magnetic proximity effect that manipulates the spin degrees of freedom in graphene, opening new opportunities for spintronic functionalities in two-dimensional materials.