Influence of the width of electron levels on the mobility of electrons in semiconductors at low temperatures

作者：L. Zaitseva · 发表于：Soviet Journal of Low Temperature Physics · 年份：1975 · DOI：10.1063/10.0029067

The condition is determined under which the conductivity associated through the transport relaxation time τtr with the scattering of electrons by charged impurities depends on the width 1/2τ of the electron level. The electron momentum relaxation time τ, which is determined by the same interaction as τtr is calculated. An expression is found for the mobility of electrons due to their interaction with the lattice (through the piezoelectric field and the deformation potential) at low temperatures T < ms2 (m is the effective mass of the conduction electrons and s is the velocity of sound). It is noted that when the electron levels have a finite width the weak piezopolaron coupling can be ignored.