Decentralization of the Heating in Multi-Finger α -Ga₂O₃ Ultra-Wide Bandgap Electronics

作者：Daniel C. Shoemaker, Yiwen Song, Anwarul Karim, Pegah Ghanizadeh, Nazli Donmezer, Ji-Hyeon Park, Dae-Woo Jeon, Hun Ki Lee, J. Mun, Sukwon Choi · 发表于：IEEE Electron Device Letters · 年份：2025 · DOI：10.1109/LED.2024.3513872

$\alpha $ -Ga2O3 is one of the ultra-wide bandgap semiconductors that gives promise to the development of next-generation power electronics. However, due to its thermodynamic instability and low thermal conductivity, overheating concerns hinder the deployment of $\alpha $ -Ga2O3 devices. This study reveals the detrimental impact of thermal crosstalk in multi-finger $\alpha $ -Ga2O3 MOSFETs. The thermal conductivity of $\alpha $ -Ga2O3 (~12 W/m $\cdot $ K at room temperature) was determined via first-principles calculations and laser-based pump-probe measurements. Device thermal characterization and modeling were performed to design a vertebrae-shaped multi-finger device layout that mitigates thermal crosstalk by decentralizing the overall device heat generation profile.