Recent Advances in the Preparation of Gallium‐based 2D Materials and Devices Based on Gallium Liquid Metal

作者：Fangliang Gao, Zexi Li, Shuti Li · 发表于：Advanced Functional Materials · 年份：2025 · DOI：10.1002/adfm.202424370 · 被引用次数：32

Gallium (Ga) liquid metal has become highly suitable for the preparation of 2D materials due to its unique physical and chemical properties, such as high surface tension, low‐melting‐point, and ease of oxidization. Ga has a very low melting point and becomes a silver‐white liquid at 29.76 °C. In the air, the surface of Ga can spontaneously undergo a Cabrera‐Mott oxidation reaction to form an ultra‐thin oxide layer. This self‐formed oxide layer is considered a natural 2D material, and other 2D materials can be derived by post‐processing the oxide layer. In recent years, advancements in surface oxidation techniques for Ga have led to the successful preparation of various Ga‐based 2D materials. These materials possess unique electronic and optical properties along with a simple, low‐cost preparation process, offering broad potential for advancing new electronic devices. This review examines recent research on the preparation of Ga‐based 2D materials derived from Ga and its alloys. It discusses the potential applications of different kinds of Ga‐based 2D devices across multiple fields. Therefore, it can be expected that Ga will play a more significant role in the development of material science in the future.