Reconfigurable negative-capacitance transistors for multimodal electrical and optical computing

作者：Xiaojie Yi, W T Chen, Chengming Luo, Xueting Liu, Shankun Xu, Qunrui Deng, Zhidong Pan, Y W Li, Ruolin Wu, Tian Tian, Nengjie Huo, Ruoyao Sun · 发表于：Applied Physics Reviews · 年份：2026 · DOI：10.1063/5.0338786 · 研究领域：Ferroelectric and Negative Capacitance Devices、2D Materials and Applications、Advanced Memory and Neural Computing

This work reports a reconfigurable ferroelectric negative-capacitance field-effect transistor based on a MoTe2 channel and an α-In2Se3/h-BN gate dielectric, which integrates steep subthreshold swing (SS) switching, reconfigurable logic operations, and polarity-programmable photovoltaic response within a single device. Leveraging a stable negative capacitance effect, the transistor achieves a high on/off ratio of approximately 106 and a SS below 60 mV dec−1 under nearly hysteresis-free operation. Its dual-gate independent control mechanism enables reversible ambipolar transport, allowing multiple Boolean logic functions to be executed with only one device, reducing hardware footprint by over 80% compared to a complementary metal–oxide–semiconductor logic circuit. Furthermore, the ferroelectric gate-induced built-in electric field provides deterministic control over the photovoltaic polarity, yielding a sign-reversible photovoltaic response with a photovoltaic on/off ratio of up to 105 at zero bias. Based on this programmable photocurrent characteristic, the study further demonstrates in-sensor convolutional image preprocessing. This device offers a compact and efficient hardware platform for reconfigurable low-power electronics and integrated sensing-computing systems.