Polarization Detection and Optical Encoding Using Vertical-MoS 2 /Si Photodetectors

作者：Genqiang Cao, Fanghao Zhu, Shubo Li, Kuan Qian, Hui Ma, Guo Q, G Z Wang · 发表于：IEEE Electron Device Letters · 年份：2026 · DOI：10.1109/led.2026.3698471 · 研究领域：Semiconductor materials and interfaces、2D Materials and Applications、Nanowire Synthesis and Applications

Polarization detection is crucial for optical communication and machine vision, but traditional systems rely on complex components. This study explores thein-situfabrication of vertical MoS2nanostructures on Si substrates to integrate polarization detection and information processing. Unlike conventional planar structures, vertical MoS2offers geometric anisotropy, enhancing polarization sensitivity. The photodetectors operate from 440 to 980 nm with a responsivity of 48 A/W, a specific detectivity of 4.2 × 1012Jones, -3 dB bandwidth of 1.7 kHz, and a microsecond response speed (rise/fall times of 105 μs/130 μs). The device acts as a physical-layer encryption unit, enabling optical information processing and encryption by mapping polarization angles to binary codes, without external modulation or decoding circuits. This study shows that 3D anisotropic structures can enable broadband high-sensitivity detection and optical processing in one device.