Thermal Stability Enhancement in AlO x -passivated Ultrathin InO x FETs by Using PEALD-AlO x Dielectric

作者：Chia-Tsong Chen, Kazuki Ishiyama, Kasidit Toprasertpong, Toshifumi Irisawa, Wen Hsin Chang, Ryutaro Nishino, Shinji Migita, Y Morita, Hiroyuki Ota, Tatsuro Maeda · 年份：2026 · DOI：10.1109/vlsitsa69131.2026.11528034 · 研究领域：Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and interfaces

We report enhancement-mode InOxFETs with high thermal stability up to 500°C by using plasma-enhanced atomic layer deposition (PEALD) derived AlOxas the back gate dielectric and the top surface passivation layer. Thanks to the oxygen diffusion from the AlOxdielectric, vacancy sites formed in InOxchannels by N2annealing are compensated, retaining a positive threshold voltage (Vth) value. Instead of negative Vthshift when stressing a positive gate bias (PBS) at 100°C, a ΔVthof +1.62 V is observed in the 500°C N2annealed 1.8 nm InOxFET for 1-hour positive bias stressing. A further improvement in current characteristics and bias stability of InOxFETs can be achieved by applying a thicker InOxchannel of 3 nm, showing a ΔVthof +0.9 V under a 1-hour PBS at the room temperature.