Correlation Enhanced Resistance Hysteresis Near Half Filling in MoS 2 /WSe 2 Heterobilayer

作者：Yong Chen, Weikang Zhang, Meizhen Huang, Shengling Xiang, Zishu Zhou, Yaqi Ma, Chenxuan Lou, Haoxi Ji, Aoqian Zhang, Yifei Jin, Liheng An, Zefei Wu, Chun Cheng, Ning Wang · 发表于：Chinese Physics Letters · 年份：2026 · DOI：10.1088/0256-307x/43/7/070801 · 研究领域：2D Materials and Applications、Topological Materials and Phenomena、Organic and Molecular Conductors Research

Abstract Ferroelectricity, typically arising from ionic displacements in noncentrosymmetric lattices, enables applications in memory devices and sensors. Recent advances in two-dimensional materials and van der Waals heterostructures have revealed novel ferroelectric phenomena, including sliding ferroelectricity and correlation-driven ferroelectricity in moiré superlattices. In this work, we fabricate and study a MoS 2 /WSe 2 moiré superlattice device exhibiting a high field-effect mobility of 17650 cm 2 V −1 s −1 . Electrical transport measurements reveal correlated insulating states accompanied by a prominent and reproducible resistance hysteresis near half-filling. Temperature and displacement field dependence further confirms the correlation-enhanced nature of the hysteresis. Our analysis suggests that displacement field-induced metal-to-insulator transition at correlated insulating state coupled with interfacial dipoles enables the observed resistance hysteresis. These results establish correlation enhanced resistance hysteresis near half-filling in a MoS 2 /WSe 2 heterobilayer, offering opportunities for exploring emergent quantum phases and device functionalities.