Molecular lead halide perovskite layer bridged AgBiS2 nanocrystals for efficient thin film solar cells

作者：Wanpeng Yang, Tianyu Sun, Haixuan Yu, Haodan Shi, Yong Hu, Junyi Huang, Zhirong Liu, Ying Xu, Lei Wang, Bo Hu, Yan Shen, Mohammad Khaja Nazeeruddin, Mingkui Wang · 发表于：Nature Communications · 年份：2026 · DOI：10.1038/s41467-026-72272-4 · 被引用次数：4 · 研究领域：Perovskite Materials and Applications、Chalcogenide Semiconductor Thin Films、Quantum Dots Synthesis And Properties

Abstract Ternary chalcogenide AgBiS 2 nanocrystals have emerged as an environmentally friendly and stable material for ultra-thin film lightweight low-cost solar cells. However, their development is currently limited by the poor charge transport characteristics, mainly due to low carrier mobility and the prevalence of surface defects. This leads to a short carrier diffusion length, which severely restricts the thickness of the photoactive layer and the absorption of near-infrared photons. Here, we demonstrate ligand-mediated heteroepitaxial growth of a molecular lead halide perovskite layer bridges along the (100) facet of AgBiS 2 nanocrystals, facilitating both efficient surface passivation and charge transport. The bridged nanocrystals enable the annealing process at elevated temperatures without inducing defect formation. This results in a greater cationic disorder, fully activating their light-absorption capability. The synergistic effect of structural modulation and cation disorder engineering addresses the long-standing trade-off between charge extraction and light absorption of AgBiS 2 nanocrystal solar cells, enabling thick-film fabrication to compensate for losses in infrared absorption. Consequently, the resultant solar cells with a 185 nm-thick AgBiS 2 nanocrystal layer achieve a certified power conversion efficiency of 11.22% and a short-circuit current of ~ 34 mA cm -2 under AM 1.5 G illumination (aperture area: 0.022 cm 2 ), representing a record-high performanc...