Highly Stable Wafer-Scale Self-Powered Photodetector for Broadband Image Sensing

作者：Shanshui Lian, Genqiang Cao, Hui Ma, Shubo Li, Kuan Qian, Jinqiu Zhang, Li Zheng, G Z Wang · 发表于：IEEE Transactions on Electron Devices · 年份：2026 · DOI：10.1109/ted.2026.3684767 · 研究领域：CCD and CMOS Imaging Sensors、Advanced Optical Sensing Technologies、Analog and Mixed-Signal Circuit Design

Vertically aligned graphene nanosheet arrays (VAGNAs) show great promise for optoelectronic applications due to their distinctive structural and electronic properties. In this study, we achieved the growth of wafer-scale (6-in) VAGNAs on silicon (Si) substrates. The as-fabricated photodetector exhibits an extensive spectral sensitivity ranging from 380 to 1550 nm while showing exceptional spatial uniformity and consistent optoelectronic performance across its operational range. After the low-pressure (5 Pa) encapsulation process, the surface state density is reduced substantially, leading to a remarkable enhancement in the device’s photoresponse. Under self-powered conditions, the device can sustain a stable photocurrent for up to four months with a cutoff frequency of 1.2 kHz while maintaining consistent performance over a wide temperature range of 218–388 K. The device achieves a responsivity (R) of 66 A/W and a specific detectivity (D*) of$7.3\times 10^{{10}}$Jones, enabling high-resolution imaging applications and paving the way for large-scale graphene-based optoelectronic device integration.