High-Performance Self-Driven Ultraviolet Photodetector Based on Sol–Gel Derived NiO/Sn:Ga 2 O 3 p–n Junction

作者：Hongxi Lu, Xuyang Chen, Shuang Qiao, Jian Chen, Jiaxing Mao, Hongyi Zhu, Pai Li, Yinmei Lu, Yunbin He · 发表于：ACS Applied Electronic Materials · 年份：2026 · DOI：10.1021/acsaelm.6c00148 · 被引用次数：1 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、GaN-based semiconductor devices and materials

Ga 2 O 3 -based self-driven solar-blind ultraviolet (SBUV) photodetectors have attracted considerable attention for their promising applications in military, civil, and industrial fields. However, conventional manufacturing methods for high-performance Ga 2 O 3 photodetectors typically require complex processes and high costs, thereby severely constraining their practical applications. In this work, we demonstrate a high-performance NiO/Sn:Ga 2 O 3 p–n junction SBUV photodetector fabricated by a low-cost sol–gel method. The device exhibits an excellent photocurrent response under zero bias, with a responsivity ( R ) of 47.89 mA/W and a detectivity ( D *) of 4.60 × 10 11 Jones at 240 nm. These performance parameters are remarkably higher than those of the Ga 2 O 3 device ( R = 7.91 mA/W, D * = 0.61 × 10 11 Jones) and the NiO/Ga 2 O 3 device ( R = 19.36 mA/W, D * = 2.61 × 10 11 Jones). Under weak light illumination ( P 255 nm = 0.53 μW/cm 2 ), the R and D * of the NiO/Sn:Ga 2 O 3 SBUV photodetector reach 150.6 mA/W and 1.33 × 10 12 Jones, respectively, which are superior to most reported NiO/Ga 2 O 3 -based photodetectors. The ultrahigh performance can be attributed to the enhanced built-in electric field at the NiO/Sn:Ga 2 O 3 p–n junction interface and the improved electrical transport properties of the Sn:Ga 2 O 3 layer. This study provides a feasible route toward the development of low-cost, high-performance Ga 2 O 3 -based self-driven UV photodetectors.