Field-free control of magnetism and electronic states in ZGNR/h-BN heterojunctions via topological line defects

作者：Guochao Shan, Wenqiang Chen, Wei Liu · 发表于：RSC Advances · 年份：2026 · DOI：10.1039/d6ra01402j · 研究领域：Topological Materials and Phenomena、Graphene research and applications、Boron and Carbon Nanomaterials Research

, and eventually to a full metal, as the ZGNR width increases. Remarkably, shifting the defect position enables continuous modulation of the spin-down bandgap (0-0.18 eV) and can even induce a ferromagnetic state. The FiM order and half-metallicity are robust under biaxial strain within ±5%, while a transition to ferromagnetism can be triggered by specific uniaxial strains. This work establishes a versatile pathway, integrating defect engineering with heterojunction design, for the on-demand, external-field-free control of spin and charge degrees of freedom in carbon-based nanostructures, paving the way for low-power spintronic devices.