Graphene inversion layer for enhanced photoresponse in layered two-dimensional materials-silicon Schottky diodes

作者：Muhammad Malik, Muhammad Abid Anwar, Xuan Ye, Xinyi Xu, Yance Chen, Zongwen Li, Zhixiang Zhang, Hanzhi Ma, Wenzhang Fang, Bin Yu, Srikrishna Chanakya Bodepudi, Yang Xu · 发表于：2D Materials · 年份：2026 · DOI：10.1088/2053-1583/ae57bd · 被引用次数：1 · 研究领域：MXene and MAX Phase Materials、Graphene research and applications、2D Materials and Applications

Abstract Efficient conversion of photocarriers to electrical signal, prior to energy loss into the substrate, is essential for energy-efficient photodetection. However, carrier recombinations and thermal losses often limit the photoresponse and speed of the photodetection in these systems. In this work, we employed a van der Waals integration strategy to improve the photoresponse in layered 2D system-silicon junctions. We used p -doped graphene as an inversion layer in Schottky junctions of layered 2D materials on n -Si. This leads to increase in the Schottky barrier height and built-in interfacial electric field, suppressing dark current by two orders of magnitude and enhanced photoresponse up to 300%. We investigated this improvement in two different layered 2D systems, macroscopically-assembled graphene and MXene (Ti 3 C 2 T X ) on silicon. This simple interfacial engineering strategy is CMOS-compatible and can be adapted to other layered 2D/3D hybrid systems, providing a universal strategy with broader implications in energy-efficient optoelectronics.