Modeling of Au Migration and Analysis of Au-Doped HgCdTe Photodetectors

作者：Dapeng Jin, Zhikai Gan, S. Kevin Zhou, Qingping Sun, Xi Wang, Liqi Zhu, Xun Li, Jian Huang, Chun Lin · 发表于：ACS Omega · 年份：2026 · DOI：10.1021/acsomega.5c13007 · 被引用次数：1 · 研究领域：Advanced Semiconductor Detectors and Materials、Semiconductor Quantum Structures and Devices、Ocular and Laser Science Research

Investigation of diffusion coefficients and activation energies constitutes a fundamental aspect of dopant characterization studies. In this study, a diffusion model for Au incorporation in vacancy-doped HgCdTe has been established, investigating the temperature-dependent and Hg vacancy concentration-dependent diffusion behavior across different experimental conditions. This study further examined the correlation between the Au activation energy and HgCdTe composition. The fabricated very long wavelength infrared photodetectors exhibited characteristic Au-doped electrical properties, validating the implemented doping strategy. These findings provide essential guidance for optimizing the Au doping process and establishing activation energy parameters with varying HgCdTe compositions.