In situ non-destructive tracking of complex defect evolution on 4H-SiC homoepitaxial surfaces: Formation mechanisms and dynamic behavior of morphological defects

作者：Mengda Wang, C. Tian, Runsheng Zheng, Yan Liu, ZhenBang Liu, Qingbo Li, Y. X. Li, Yongfu Li, Fapeng Yu, Hongyan Zhang, Yanmin Zong, Xian Zhao · 发表于：Applied Surface Science · 年份：2026 · DOI：10.1016/j.apsusc.2026.165951 · 被引用次数：2 · 研究领域：Silicon Carbide Semiconductor Technologies、Silicon and Solar Cell Technologies、Thin-Film Transistor Technologies