Extending Polarization Detection to the Infrared Region via Sb 2 Se 3 Nanowires/PbS Quantum Dots Heterojunctions

作者：Kai Zhang, Wenhao Ran, Yali Yu, Pan Wang, Huichen Cao, Bowei Dai, Yechao Han, Linjuan Guo, Zhiqiang Li, Juehan Yang, Hui Guo, Lihong Bao, Guozhen Shen, Zhongming Wei, H. F. Yang, Hong‐Jun Gao · 发表于：ACS Nano · 年份：2026 · DOI：10.1021/acsnano.5c16680 · 被引用次数：3 · 研究领域：Quantum Dots Synthesis And Properties、Chalcogenide Semiconductor Thin Films、Advanced Semiconductor Detectors and Materials

Polarization-sensitive infrared photodetectors find broad use in military and industrial fields and thus have emerged as a research hotspot in recent years. Owing to the intrinsic asymmetric structure, Sb 2 Se 3 nanowires hold significant application in polarization detection. However, constrained by bandgap width, their polarization detection wavelength is limited to below 1000 nm. In this work, Sb 2 Se 3 nanowires (NWs)/PbS quantum dots (QDs) heterojunctions were fabricated, with the carrier transport efficiency at the heterojunction interface enhanced via long-to-short-chain ligand exchange. Compared with pure Sb 2 Se 3 NW-based photodetectors (PDs), the Sb 2 Se 3 NWs/PbS QDs heterojunction-based counterparts not only have their detection wavelength extended to 1.55 μm but, more notably, their polarization detection wavelength is also extended to 1.55 μm. The photodetector exhibits responsivities ( R λ ) of 1.12 A/W and 0.86 A/W for 1.31 and 1.55 μm incident lasers, with measured dichroic ratios of 1.38 and 1.58, respectively, for the polarized light at these two wavelengths. The ultraviolet photoelectron spectroscopy (UPS) analysis reveals that the separation of photogenerated carriers at the heterojunction interface enhances the absorption of infrared polarized light by the defect energy levels in Sb 2 Se 3 NWs, thereby extending the polarized photoresponse wavelength of the heterojunction to 1.55 μm. Moreover, by employing convolution kernels constructed from the infrar...