AlGaN-based deep ultraviolet vertical-cavity surface-emitting lasers on a flexible substrate

作者：Yongming Zhao, Patsy A. Miranda Cortez, Zhijie Zou, Yang Mei, Pengcheng Jian, Weijie Liu, Yufan Wei, Baoping Zhang, Feng Wu, Chang Chen, Xiaohang Li, Jiangnan Dai · 发表于：Optics Letters · 年份：2025 · DOI：10.1364/ol.581989 · 被引用次数：10 · 研究领域：GaN-based semiconductor devices and materials、Optical Coatings and Gratings、Semiconductor Lasers and Optical Devices

Integrating vertical-cavity surface-emitting lasers (VCSELs) on flexible substrates offers significant opportunities for developing smart light sources and multifunctional photonic platforms. In this study, AlGaN-based deep ultraviolet VCSELs on a flexible substrate were demonstrated. The AlGaN quantum well heterojunction was separated from the sapphire substrate by selectively removing the thin n-GaN sacrificial layer using electrochemical etching and subsequently transferred onto a flexible substrate. Meanwhile, two dielectric distributed Bragg reflectors were deposited to construct the vertical resonant cavity. Single-mode lasing at 294.2 nm with a threshold power density of 7.4 MW/cm 2 and a linewidth of 0.39 nm was achieved at room temperature. Furthermore, multimode lasing attributed to non-uniformities within the distributed Bragg reflectors cavity was observed. This work opens up possibilities for advancing flexible VCSELs, as well as for the flexible photonic integration in the deep ultraviolet spectrum.