Deep ultraviolet photosynapse with enhanced reproducibility and heat dissipation for integrated in-sensor computing

作者：Haoyan Zhan, Yilin Wang, Zhiwei Wang, Xiaolong Zhao, Keju Han, Zhe Feng, Zuheng Wu, Hong Huang, Yanni Zou, Haoran Yin, Xiaohu Hou, Guangwei Xu, Xuanze Zhou, Nan Gao, Shibing Long · 发表于：Fundamental Research · 年份：2025 · DOI：10.1016/j.fmre.2025.12.012 · 研究领域：Ga2O3 and related materials、Luminescence Properties of Advanced Materials、Thin-Film Transistor Technologies

Deep ultraviolet (DUV) photodetectors in key fields increasingly demand higher capabilities for processing sensed information. In-sensor computing (ISC) has emerged as a revolutionary approach to enable perception beyond the sensing capability of traditional photodetectors. Ultrawide bandgap Ga 2 O 3 , with high DUV sensitivity and excellent stability, offers a subversive scheme for advanced DUV detection. Moreover, its conductivity plasticity, enabled by the persistent photoconductivity (PPC) in its photodetectors, lays the foundation for the application in DUV ISC systems. However, the PPC simultaneously damages the reproducibility for consecutive perception, while frequent computing increases heat production, particularly in integrated Ga 2 O 3 photodetector chips. In this work, two-terminal Ga 2 O 3 /SiC photosynapses were tailored with reproducible plasticity and enhanced heat dissipation. A tailored bias Pulse Reset strategy is capable of erasing the PPC effect within 4.10 μ s based on tunable tunneling effect at the interface, thus ensuring reproducibility in high-frequency temporal information processing. The introduced commercial SiC platform enhances heat dissipation. The high responsivity (15 A/W), in situ 4-bit encoding capability, and swift Reset speed rank this device among the top-tier DUV photodetectors and photosynapses. Furthermore, real-time perception and tracking of moving objects have been demonstrated based on this device in a residual neural network fo...