van Hove Source for Ultralow Power Field-Effect Transistors

作者：Baizhe He, Hang Zhou, Yuqi Zhuang, Zebin Liu, Xiaobing Ma, Boxiang Zhang, Jiankun Li, Tian Pei, Zaizhe Zhang, Zaizhe Zhang, Xiaosong Deng, Xiaobo Lu, Chuanhong Jin, Fei Liu, Kaili Jiang, Jia Si, Zhiyong Zhang, Zhiyong Zhang · 发表于：ACS Nano · 年份：2025 · DOI：10.1021/acsnano.5c17157 · 被引用次数：2 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Quantum and electron transport phenomena、Carbon Nanotubes in Composites

Field-effect transistors (FETs) with sub-60 mV/decade subthreshold swing (SS) at room temperature are highly sought after for enabling next-generation ultralow-power integrated circuits (ICs). We present a van Hove source (VHS) FET that exploits the steeply declining density of states (DOS) at the van Hove singularity in a one-dimensional (1D) semiconductor to overcome the Boltzmann limit on switching performance in conventional FETs. The VHS FETs built on individual semiconducting carbon nanotubes (CNT) exhibit a room temperature SS of 49 mV/decade. This steep switching behavior is achieved by electrostatically tuning the source Fermi level through a control gate. Compared with the 22-nanometer-node silicon FETs, a comparable on-state current is obtained in our VHS FETs with a 450 nm gate length but at a reduced supply voltage of 0.5 V (versus 0.75 V for silicon). VHS engineering may offer a generalizable pathway for 1D semiconductors to lower SS and even construct steep-slope transistors that simultaneously deliver ultralow power, high performance, and scalability.