Robust Ga 2 O 3 Memristor with Sharp Stable Negative Differential Resistance for Energy-Efficient Reliable Analog Resistive Switching and Artificial Synapse Applications

作者：Xingli Su, Dan Gong, Xia Chen, Bo Gao, Ya Nie, Min Gong, Yong Peng, Xi Zhang, Gang Xiang · 发表于：ACS Nano · 年份：2025 · DOI：10.1021/acsnano.5c15821 · 被引用次数：8 · 研究领域：Ga2O3 and related materials、Advanced Memory and Neural Computing、Transition Metal Oxide Nanomaterials

Nowadays, memristors mainly rely on external circuits to manage power consumption, especially under high electric fields, which increases system complexity and reduces energy efficiency. To solve this problem, it is desirable to achieve memristors with an intrinsic current-limiting mechanism that can energy-efficiently work under high electric fields. Here, we demonstrate a robust Sn-doped β-Ga 2 O 3 memristor that exhibits a prominent negative differential resistance (NDR) effect at the MV m –1 level, which enables effective self-limiting of overshoot current. The coexistence of the NDR and resistive switching characteristics is attributed to the reversible migration of oxygen vacancies and dynamic modulation of the Schottky barrier. Importantly, the memristor demonstrates record-breaking NDR performance metrics, including the sharpest slope up to 3.55 and the longest endurance up to 10 3 cycles and 10 4 seconds, among the reported ones. Furthermore, the memristor exhibits typical analog resistive switching and essential artificial synapse behaviors. Assisted with the sharpest and stablest NDR effect under high electric field, the robust Ga 2 O 3 memristor offers a promising platform toward high-performance energy-efficient multifunctional applications.