High-Performance p-Type SnO Thin-Film Transistors With Superior Bias Stress Stability via Fluorine Plasma Treatment

作者：Peng Dai, Jialong Song, Zening Gao, Mingyu Zhuang, Chaoran Dong, Ning Wang, Yiwen Yao, Yiming Wang, Jiawei Zhang, Yuxiang Li, Qian Xin, Aimin Song · 发表于：IEEE Transactions on Electron Devices · 年份：2025 · DOI：10.1109/ted.2025.3641096 · 被引用次数：3 · 研究领域：Thin-Film Transistor Technologies、Ga2O3 and related materials、Nanowire Synthesis and Applications

Tin monoxide (SnO) is a promising p-type oxide semiconductor, but suffers from intrinsic limitations such as low hole mobility ($\mu _{\text {FE}}$), pooron/offcurrent ratio (${I}_{\mathrm {ON}}/{I}_{\mathrm {OFF}}$), large subthreshold swing (SS), and bias instability, which have hindered its practical applications. In this work, fluorine plasma treatment (FPT) is applied to the back channel of SnO thin-film transistors (TFTs). The optimized devices exhibit significantly enhanced performance, including a high$\mu _{\text {FE}}$of 3.0 cm${}^{{2}}\text {/V} \cdot $s, an${I}_{\mathrm {ON}}/{I}_{\mathrm {OFF}}$exceeding$10^{{5}}$, and a low SS of 0.37 V/dec. Bias stress stability is also markedly improved, with the threshold voltage shift ($\Delta {V}_{\text {TH}}$) decreased from 0.74 V (untreated) to 0.34 V (treated) after 10 000 s of stress at$125~^{\circ }$C, corresponding to a 54.1% reduction. These improvements are attributed to fluorine-induced passivation of oxygen vacancies, which suppresses hole trap density without degrading film quality. Finally, an all-oxide inverter based on optimized p-SnO and n-IGZO TFTs is demonstrated, exhibiting an ultrahigh-voltage gain of 470 V/V and a noise margin of 90% at a low supply voltage of 3.0 V. The fabrication process, performed below$250~^{\circ }$C, is compatible with back-end-of-line (BEOL) and flexible substrates, offering a viable route for monolithic 3-D integration.