Space-Charge-Limited van der Waals Spin Transistor

作者：Thomas K. M. Graham, Yu‐Xuan Wang, Niranjana Renjith Nair, Kseniia Mosina, Kenji Watanabe, Takashi Taniguchi, Zdeněk Sofer, Brian B. Zhou · 发表于：Physical Review Letters · 年份：2026 · DOI：10.1103/61lp-6slp · 被引用次数：1 · 研究领域：2D Materials and Applications、Magnetic properties of thin films、Topological Materials and Phenomena

Integrating semiconducting and magnetic materials could combine transistor-like operation with nonvolatility and enable architectures such as logic-in-memory. Here, we employ correlated electrical transport and scanning nitrogen-vacancy (NV) center magnetic imaging to elucidate a spin transistor concept that amalgamates vertical and lateral hopping transport inside a 2D antiferromagnetic semiconductor, mechanistically distinct from vertical tunneling devices. Our device, based on a monolayer-bilayer junction in CrSBr, displays giant, gate-tunable magnetoresistance driven by the dual action of electrostatic doping on space-charge-limited lateral conduction and interlayer exchange coupling. Moreover, we visualize a field-trainable, layer-sharing effect that selects between coherent or domain-wall reversal at the spin-flip transition, enabling multilevel, memristive conductance states. Our layer-dependent space charge mechanism for convergent electrical and magnetic control opens opportunities to address limitations in contemporary computing.