Anion-substitution engineering at low temperature for preparing efficient CuIn(S1−xSex)2 solar cells

作者：Jiajin Kuang, Wenbo Cao, Yang Wang, Faisal Naveed, Chaofan Zheng, Chaoyang Wang, Yingying Dong, Mingtai Wang · 发表于：Journal of Alloys and Compounds · 年份：2025 · DOI：10.1016/j.jallcom.2025.185430 · 研究领域：Chalcogenide Semiconductor Thin Films、Copper-based nanomaterials and applications、Quantum Dots Synthesis And Properties

Copper indium sulfoselenide CuIn(S 1 −x Se x ) 2 has attracted a great research interest as a promising absorber material for photovoltaics because of its simple composition, unique optical and electrical properties and easy synthesis. Generally, high-quality CuIn(S 1 −x Se x ) 2 thin films require subsequent high-temperature selenization and sulfurization treatment (500–630 °C) on a Mo substrate to prepare high-efficiency CuIn(S 1 −x Se x ) 2 solar cells, resulting in a significantly improved short-circuit current density ( J sc ) and fill factor (FF) with a remarkable sacrifice of open-circuit voltage ( V oc ). Here, we report a facile low-temperature Se-substitution strategy for the preparation of efficient CuIn(S 1 −x Se x ) 2 solar cells. After the about 8 % of S atoms in CuInS 2 was replaced with Se ones, the chalcopyrite phase is preferentially formed under a reduced formation of secondary phases for significantly reduced defect states and the resulting CuIn(S 1 −x Se x ) 2 solar cell exhibits an enhanced device performance with a peak power conversion efficiency of 5.70 %, a remarkably increased J sc by 16.84 % and a loss of V oc by 8.57 % that is much smaller than the loss by 19 % during selenization; in particular, the FF in the best device reaches up to ∼70 % which is the highest FF value in the CuIn(S 1 −x Se x ) 2 solar cells solution-processed at low temperature. The details of the Se-substitution effects on the phase structure, the change in defect density, the...