Room-temperature single-photon emission from β-Ga2O3

作者：Yi‐Ming Shi, Zhengchang Xia, Junhua Meng, Libin Zeng, Ji Jiang, Zhenchen Li, Aoxing Wang, Huabo Yang, Zhigang Yin, Xingwang Zhang · 发表于：Nature Communications · 年份：2025 · DOI：10.1038/s41467-025-66953-9 · 被引用次数：3 · 研究领域：Ga2O3 and related materials、Neonatal and Maternal Infections、Photocathodes and Microchannel Plates

Abstract Single photon emitters (SPEs) hosted by the wide bandgap semiconductors have the great potential to enable quantum applications at room temperature. Recently, many defect-based SPEs have been discovered in various wide bandgap materials, such as diamond, AlN, SiC, h-BN, GaN and ZnO. Beta-phase gallium oxide (β-Ga 2 O 3 ) is an emerging ultrawide bandgap semiconductor with promising electronic and optoelectronic properties, however, there has been no report on single-photon emission from β-Ga 2 O 3 to date. Herein, we present the demonstration of room-temperature photostable single-photon emission from β-Ga 2 O 3 . We find that the SPEs can be found in a variety of β-Ga 2 O 3 including homoepitaxial and heteroepitaxial β-Ga 2 O 3 films and commercially available β-Ga 2 O 3 wafers. The observed emitters have excellent photophysical characteristics including high purity, high brightness, and linear polarization. First-principles calculations predict that a localized neutral divacancy defect, generated by plasma treatment and activated by annealing, is responsible for the SPEs in β-Ga 2 O 3 . The high-performance room-temperature SPEs embedded in a technologically mature semiconductor are promising for on-chip scalable integrated devices and quantum technologies.