Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors

作者：Chengyuan Xue, Congwei Tan, Xin Gao, Junchuan Tang, Weiyu Sun, Yuling Yin, Mengdi Wang, Xiaoyin Gao, Hao An, Boyang Fu, Wanqing Liu, Yuteng Wang, Ye Li, Feng Ding, Hailin Peng · 发表于：Nature Communications · 年份：2025 · DOI：10.1038/s41467-025-65641-y · 被引用次数：4 · 研究领域：2D Materials and Applications、Nanowire Synthesis and Applications、Ferroelectric and Negative Capacitance Devices

Gate-all-around (GAA) nanosheet field-effect transistors (FETs) with two-dimensional (2D) semiconductor channels surrounded by high-κ dielectrics show outstanding performance and hold promise for ultimate miniaturization in the post-Moore era. However, the synthesis of uniform wafer-scale 2D GAA nanosheet single crystals on industry-compatible substrates presents a considerable challenge. Herein, we report wafer-scale uniform growth of 2D high-κ oxide/semiconductor/high-κ oxide GAA single crystals on r-plane sapphire via buffered van der Waals (vdW) epitaxy. The 2D GAA heterostructures possess atomically flat interfaces, exhibiting superb uniformity and crystallinity across the wafer. Furthermore, the 2D GAA heterostructures can be transferred to diverse substrates owing to the vdW gap within the buffer oxide, leaving a reusable wafer. FETs based on 2D GAA heterostructures demonstrate exceptional performance with on/off ratio and optimal carrier mobility of > 10⁶ and 227 cm² V⁻¹ s⁻¹, respectively. The transferable wafer-scale 2D GAA heterostructures provide promising avenues for the fabrication of monolithic three-dimensional integrated circuits and extending Moore’s law beyond the limitations of silicon. Gate-all-around (GAA) nanosheet field-effect transistors (FETs) based on 2D semiconductors hold promise to complement silicon in future integrated circuits. Here, the authors report the wafer-scale growth of high-κ dielectric/semiconductor β-Bi2SeO5/Bi2O2Se/α-Bi2SeO5 heteros...