Elucidating and decoupling diverse fatigue mechanisms toward static self-recovery in ZrO2-based antiferroelectrics

作者：Haoji Qian, Rongzong Shen, Jiacheng Xu, Miaomiao Zhang, Minglei Ma, Yian Ding, Xiaoxi Li, Gaobo Lin, Jiani Gu, Ran Cheng, Yan Liu, Chengji Jin, Jiajia Chen, Yue Hao, Genquan Han · 发表于：Communications Materials · 年份：2025 · DOI：10.1038/s43246-025-01012-w · 被引用次数：1 · 研究领域：Ferroelectric and Negative Capacitance Devices、Ferroelectric and Piezoelectric Materials、Semiconductor materials and devices

ZrO2-based antiferroelectric (AFE) materials exhibit superior endurance compared to HfO2-based ferroelectrics, making them promise for nanoelectronics. Nonetheless, their endurance properties remain insufficient for dynamic random-access memory applications. In this respect, the fundamental physical mechanisms underlying polarization fatigue and the intrinsic constraints on self-recovery remain poorly understood, yet they are pivotal for achieving fatigue-free operation. Here, we systematically decouple the multiple fatigue mechanisms in ZrO2-based AFE capacitors and introduce a static self-recovery (SSR) method that significantly improves endurance. We present a three level traps model, developed by electrical measurements and first-principles calculations, that successfully describes the shallow/deep fatigue of ZrO2-based AFE materials and their SSR processes. Moreover, the SSR effect can be significantly enhanced by optimizing the combination of break time and cycling unit. The proposed SSR methodology offers a viable solution to the endurance challenges of AFE random-access memory in practical applications, paving the way for high-endurance, energy-efficient memory technologies with enhanced functional versatility. ZrO2-based antiferroelectric materials hold promise for nanoelectronics due to their superior endurance, yet their performance in dynamic random-access memory remains limited by polarization fatigue. Here, the authors decouple fatigue mechanisms and introduce a...