Mid-wavelength infrared planar junction photodetector based on InAs/GaSb Type-Ⅱ superlattices

作者：Shihao Zhang, Hongyue Hao, Ye Zhang, Shuo Wang, Xiangyu Zhang, Ruoyu Xie, Lingze Yao, Faran Chang, Yifan Shan, Haofeng Liu, Guo Wei Wang, Donghai Wu, Dongwei Jiang, Yingqiang Xu, Zhichuan Niu, Wenjing Dong · 发表于：Journal of Semiconductors · 年份：2025 · DOI：10.1088/1674-4926/24120014 · 被引用次数：3 · 研究领域：Advanced Semiconductor Detectors and Materials、Semiconductor Quantum Structures and Devices、Superconducting and THz Device Technology

Abstract In this paper, a planar junction mid-wavelength infrared (MWIR) photodetector based on an InAs/GaSb type-Ⅱ superlattices (T2SLs) is reported. The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy (MBE), followed with a ZnS layer grown by the chemical vapor deposition (CVD). The p-type contact layer was constructed by thermal diffusion in the undoped superlattices. The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was constructed. Furthermore, the effects of different diffusion temperatures on the dark current performance of the devices were researched. The 50% cut-off wavelength of the photodetector is 5.26 μ m at 77 K with 0 V bias. The minimum dark current density is 8.67 × 10 −5 A/cm 2 and the maximum quantum efficiency of 42.5%, and the maximum detectivity reaches 3.90 × 10 10 cm·Hz 1/2 /W at 77 K. The 640 × 512 focal plane arrays (FPA) based on the planner junction were fabricated afterwards. The FPA achieves a noise equivalent temperature difference (NETD) of 539 mK.