Flash annealing–engineered wafer-scale relaxor antiferroelectrics for enhanced energy storage performance

作者：Yizhuo Li, Kepeng Song, Mei‐Xiong Zhu, Xiaoqi Li, Zhaowei Zeng, KangMing Luo, Yuxuan Jiang, Zhe Zhang, Cuihong Li, Yujia Wang, Bing Li, Zhihong Wang, Zhidong Zhang, Weijin Hu · 发表于：Science Advances · 年份：2025 · DOI：10.1126/sciadv.ady2349 · 被引用次数：5 · 研究领域：Ferroelectric and Piezoelectric Materials、Ferroelectric and Negative Capacitance Devices、Multiferroics and related materials

Dielectric capacitors are essential for energy storage systems because of their high-power density and fast operation speed. However, optimizing energy storage density with concurrent thermal stability remains a substantial challenge. Here, we develop a flash annealing process with ultrafast heating and cooling rates of 1000°C per second, which facilitates the rapid crystallization of PbZrO 3 film within a mere second, while locking its high-temperature microstructure to room temperature. This produces compact films with subgrain boundary fractions of 36%, nanodomains of several nanometers, and negligible lead volatilization. These contribute to relaxor antiferroelectric film with a high breakdown strength (4800 kilovolts per centimeter) and large polarization (70 coulombs per square centimeter). Consequently, we have achieved a high energy storage density of 63.5 joules per cubic meter and outstanding thermal stability with performance degradation less than 3% up to 250°C. Our approach is extendable to ferroelectrics like Pb(Zr 0.52 Ti 0.48 )O 3 and on wafer scale, providing on-chip nonlinear dielectric energy storage solutions with industrial scalability.