2.3 kV low leakage vertical (001) β-Ga2O3 diodes enabled by a synergistic guard ring and beveled field plate

作者：Ming Li, Mingchao Yang, Leidang Zhou, Wen Zhang, Weihao Liu, Li Song, Songquan Yang, Weihua Liu, Chuanyu Han, Xin Li, Li Geng, Yue Hao · 发表于：Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 年份：2025 · DOI：10.1116/6.0004965 · 被引用次数：1 · 研究领域：Ga2O3 and related materials、GaN-based semiconductor devices and materials、Photocathodes and Microchannel Plates

This study presents a vertical (001) β-Ga2O3 Schottky barrier diode (SBD) incorporating a composite edge termination structure, which combines a nitrogen-implanted guard ring (GR) with a small-angle beveled field plate (BFP). Leveraging technology computer-aided design simulations grounded in semiconductor physics, we developed and optimized the device's geometric structure. Integration of GR with BFPs enables suppression of the anode-edge electric-field peak without degrading the favorable forward conduction characteristics. Thanks to this optimized termination design, the fabricated diode achieves a breakdown voltage (Vbr) of 2.3 kV—6.5 times higher than that of nonterminated devices—along with a specific on-resistance (Ron,sp) of 3.19 mΩ cm2. These properties yield a high Baliga's figure of merit of 1.71 GW/cm2. Furthermore, at a reverse bias of −1500 V, the device demonstrates a low leakage current density of less than 1 μA/cm2. This work presents a feasible approach to improve the performance of β-Ga2O3 SBDs, paving the way for their adoption in power electronics.