An Overview on Formation of Radiation-Induced Interface Traps in Silicon-Based Devices

作者：Xuehui Dai, Min Zhu, Fei Wu, Yanru Ren, Minghui Liu · 发表于：Micromachines · 年份：2025 · DOI：10.3390/mi16111278 · 被引用次数：3 · 研究领域：Radiation Effects in Electronics、Silicon and Solar Cell Technologies、Semiconductor materials and devices

In an ionizing radiation environment, the formation of interface traps affects transistor performance, which may lead to device failure. This article reviews interface trap formation mechanisms in silicon-based devices. It explores interface trap types, electrical properties, and their impacts on devices' performance. Finally, the main factors affecting the formation of interface traps are summarized. By reviewing these issues and exploring future research directions, guidance will be provided for the design of radiation-resistant devices to enhance their reliability in irradiated environments.