Low-Temperature Layer-by-Layer Epitaxy of Ferroelectric Al 0.63 Sc 0.37 N Thin Films for Back-End-of-Line Integration

作者：Chao Li, Chao Li, Dirui Wu, Mingqiang Cheng, Shuhua Ma, Zihao Lin, Zhihan Zou, Weinan Chen, Jiangyu Li, Changjian Li, Changjian Li · 发表于：Nano Letters · 年份：2025 · DOI：10.1021/acs.nanolett.5c04014 · 被引用次数：5 · 研究领域：Acoustic Wave Resonator Technologies、Ferroelectric and Piezoelectric Materials、Semiconductor materials and devices

Sc-doped aluminum nitride ((Al,Sc)N) is a promising material for next-generation nonvolatile memory and MEMS applications for its robust ferroelectricity and CMOS compatibility. However, the large coercive field remains the roadblock. Acquiring high Sc content-doped (Al,Sc)N epitaxial thin films is essential to reduce the coercive field but remains challenging, especially at low temperature for back-end-of-line (BEOL) integration. Here we demonstrate the layer-by-layer epitaxial growth of ferroelectric Al 0.63 Sc 0.37 N thin films (highest Sc content in epitaxial films) at 400 °C by developing a nitrogen-plasma-assisted pulsed laser deposition (N-PLD) technique. Verified by X-ray photoelectron spectroscopy analysis, the atomic nitrogen atmosphere is crucial to suppress nitrogen vacancies and stabilize the high Sc content (Al,Sc)N wurtzite phase. The high-quality epitaxial Al 0.63 Sc 0.37 N thin films show high remanent polarization >160 μC cm –2 and desirable low coercive field of ∼2.9 MV cm –1 . Our results open a new pathway for high-quality (Al,Sc)N BEOL integration for nonvolatile memory and MEMS applications.