A Heterogeneous Integration Architecture for Broadband (DUV-Visible) CMOS Image Sensor

作者：Jingcheng ZHANG, Yongyu Wu, Yongbo Lin, Xuan Ye, Yunhao Zhang, Xiaoming Shi, Shenzui Hu, Wenzhang Fang, Bin Yu, Dawei Gao, Yang Xu, Dianyu Qi · 发表于：IEEE Electron Device Letters · 年份：2025 · DOI：10.1109/led.2025.3627937 · 被引用次数：1 · 研究领域：Ga2O3 and related materials、CCD and CMOS Imaging Sensors、Thin-Film Transistor Technologies

Commercial Si-based CMOS image sensors (CIS) are fundamentally limited by the narrow bandgap of Si, which results in weak response in the deep-ultraviolet (DUV) spectrum. To overcome this limitation, we propose a heterogeneous integration architecture that combines wide-bandgap Ga2O3with high sensitivity to DUV with Si-based CMOS process. This work demonstrates 4-transistor CIS (4T-CIS) based on Si/Ga2O3/NiO heterojunction for the first time. Fabricated on a 12-inch wafer using a 55 nm CMOS process, it integrates 1.2 V core devices and 3.3 V I/O devices. This integrated scheme utilizes a low thermal budget and stress-free process, which is fully compatible with CMOS manufacturing flows. The hetero-integrated CIS exhibits broadband response from DUV to visible light. Notably, at 254 nm, it achieves a dynamic range (DR) of 50 dB and a quantum efficiency (QE) of 35%, significantly improving over commercial Si-based CIS. This approach establishes a promising heterogeneous integration architecture for broadband CIS in the future, offering broad application prospects in fields such as flame detection, biochemical sensing, and space astronomy.