Laser processing of Ni-B coated Si-wafer: Simultaneous realization of selective emitters and copper barrier layers for TOPCon solar cells

作者：Houfang Teng, Xianli Huang, Hui Yang, Jing Niu, Ruijie Zhang, Miao Yu, Yilai Gao, Jianbo Wang, Tao Wang, Jianping He · 发表于：Materials Science in Semiconductor Processing · 年份：2025 · DOI：10.1016/j.mssp.2025.110198 · 被引用次数：3 · 研究领域：Silicon and Solar Cell Technologies、Semiconductor materials and interfaces、Thin-Film Transistor Technologies

Laser doping selective emitter (LDSE) technology has become a research hotspot in the large-scale production of silicon solar cells (SCs) due to its advantages of room-temperature processing, precise control of doping profiles, and short processing duration. In this study, a Ni-B alloy coating was chemically deposited on the front surface of n-type tunneling oxide passivated contact (TOPCon) crystalline silicon (c-Si) solar cell precursors, through which selective B doping and the formation of NiSi 2 metal seed layer were achieved during laser grooving process. Electrochemical capacitance-voltage (ECV) tests revealed a significant enhancement in carrier concentration, thereby confirming the successful doping of B. This process resulted in the formation of a locally heavily doped (p ++ ) layer, which effectively reduced the contact resistance (R c ) between the metal electrodes and Si substrate. Theoretical calculations indicated that the built-in potential (V bi ) of the pn junction increased, thereby enhancing built-in electric field (E bi ). This enhancement of the built-in electric field contributed to the improvement of both the open-circuit voltage (V oc ) and the short-circuit current density (J sc ), and significantly strengthened the adhesion between the metal electrodes and the Si substrate, ultimately leading to a comprehensive enhancement in the performance of the SCs. This study provides a new technical route to advance the industrial application of laser doping t...