Photothermal Engineering in Ta 2 O 5 Memristors: Blue-Laser-Driven Filament Reorientation for On/Off Ratio Enhancement

作者：Han Gao, Ju‐Hsiou Liao, Yingtao Chen, Wenjie He, Yijun Lü, Zhong Chen, Weijie Guo · 发表于：ACS Applied Materials & Interfaces · 年份：2025 · DOI：10.1021/acsami.5c12170 · 被引用次数：2 · 研究领域：Advanced Memory and Neural Computing、Photoreceptor and optogenetics research、Ferroelectric and Negative Capacitance Devices

This work demonstrates the first instance of wavelength-selective resistive switching (RS) activation in Ag/Ta 2 O 5 /ITO memristors via photothermal engineering, revealing that photon–matter interactions govern conductive filament (CF) dynamics, a critical insight for advancing memristor-based neuromorphic computing architectures. The photothermal effects of 405, 532, and 790 nm laser irradiation are conducted through current–voltage ( I – V ) characterization, 100-cycle on/off ratio evaluation, and retention time analysis. Remarkably, the device subjected to 405 nm laser irradiation (300 s, 1.2 mW) exhibits an unprecedented on/off ratio of 93, a retention time above 10 4 s, and a maximum current of 2 mA, representing nearly a 10-fold RS enhancement compared to the pristine device. Finite element thermal simulations and laser power-dependent RS analysis elucidate that the laser-induced CF formation arises from localized photothermal heating, enabling precise control over device performance.