Zn/Sn Regulation of Kesterite Synaptic Memristors for Alterable Resistive Switching and Advanced Neuromorphic Functions

作者：Fengxia Yang, Hao Sun, Xiang Zhang, Xiaofei Dong, Jianbiao Chen, Xuqiang Zhang, Jiangtao Chen, Yun Zhao, Yan Li · 发表于：The Journal of Physical Chemistry Letters · 年份：2025 · DOI：10.1021/acs.jpclett.5c02780 · 被引用次数：6 · 研究领域：Advanced Memory and Neural Computing、Neuroscience and Neural Engineering、Neural dynamics and brain function

In the pursuit of high-performance and reliable next-generation neuromorphic computing systems, the precise modulation of material properties is of crucial significance for enabling advanced brain-inspired functionalities in optoelectronic devices, but still a challenge yet. This study demonstrates that the Zn/Sn ratio in kesterite chalcogenide (Cu 2 ZnSn(S,Se) 4, CZTSSe) optoelectronic memristors play a pivotal regulatory role in fundamental resistive switching behaviors, as well as the synaptic function simulation and brain-like morphological applications thereof. For a Zn/Sn ratio of 1.1, the device’s On/Off ratio (i.e., memory window) can be increased by two-orders-of-magnitude, from 17 at a ratio of 0.7 to 1027, while the Set/Reset voltages significantly reduced to −0.38/0.34 V. Furthermore, under electrical and light (visible 655 nm to near-infrared 808 nm) stimuli, the device can more effectively emulate diverse biological synaptic behaviors, including long-term potentiation/depression (LTP/LTD), short-/long-term memory (STM/LTM), spike-intensity-dependent plasticity (SIDP), spike-duration-dependent plasticity (SDDP), spike-rate-dependent plasticity (SRDP), the “learning-forgetting-consolidation” process, and recapitulation of classical conditioning. Especially, by exploiting the device’s NIR-modulated multilevel conductance and its Zn/Sn-dependent On/Off ratio characteristics, high-security signal encryption/decryption and efficient image denoising have been achieved,...