An exploratory study of 55 nm HV-CMOS commercial technology for monolithic pixel sensors

作者：Lei Li, Zhiyu Xiang, Weiguo Lu, Menglian Zhao, Chuanbin Zeng, Zhiwei Xu, Yang Zhou, Jianan Deng, Kenan Xie, Zhe Chen, Xiaolong Li, Yuwei Chen, Xuan Guo, Zhifeng Shi, Chong Wang, H. Zhang, H. Zhu, Mingkui Wang, Jian Wang, Yongming Li · 发表于：Journal of Instrumentation · 年份：2025 · DOI：10.1088/1748-0221/20/10/c10011 · 被引用次数：3 · 研究领域：Particle Detector Development and Performance、CCD and CMOS Imaging Sensors、Radiation Detection and Scintillator Technologies

Abstract High-Voltage CMOS (HV-CMOS) pixel sensors are promising candidates for tracking applications in future high-energy physics experiments. Compared to the current mainstream 180 nm–130 nm processes, next-generation smaller technology nodes offer significant potential for improvements in power consumption, design flexibility, and overall performance.We have developed a prototype based on a commercial 55 nm HV-CMOS process to investigate the characteristics of this technology. The design and preliminary test results of the prototype are presented, and the feasibility and potential future optimization directions are discussed.