Transferable Highly Crystalline Perovskite Ferroelectrics for Low-Power Memory

作者：Tianqing Wan, Yiping Xiao, Zhihang Xu, Chaoyi Zhu, Jianmin Yan, Houji Zhou, Jialiang Wang, Sijie Ma, Hongye Chen, Zhengdao Xie, Yi Li, Ye Zhu, Yuefeng Nie, Dianxiang Ji, Yang Chai · 发表于：ACS Nano · 年份：2025 · DOI：10.1021/acsnano.5c09313 · 被引用次数：4 · 研究领域：Ferroelectric and Piezoelectric Materials、Perovskite Materials and Applications、Ferroelectric and Negative Capacitance Devices

Data-centric applications demand low-power and compact memory solutions. Ferroelectric field-effect transistors (FeFETs) are promising candidates due to the high energy efficiency of ferroelectric switching and the elimination of selectors. However, ferroelectric materials that simultaneously demonstrate a low switching energy and compatibility with FeFET fabrication processes remain limited. In this work, we show that the transferable perovskite ferroelectric bismuth ferrite (BiFeO 3 ) with high crystal quality can be integrated with two-dimensional materials to realize low-power FeFETs. The transferred BiFeO 3 films exhibit a coercive field of 30 kV/cm and a leakage current of under 10 –5 A/cm 2 (at 1 MV/cm), resulting in a switching energy of 0.05 J/cm 3 . Leveraging the high-quality interface between transferred BiFeO 3 with molybdenum disulfide (MoS 2 ), we fabricate two types of FeFETs: a metal–ferroelectric–semiconductor (MFS) structure showing volatile memory and a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) structure showing nonvolatile memory. Both device architectures exhibit low power consumption (1.5 fJ bit –1 μm –2 for MFS and 11.2 fJ bit –1 μm –2 for MFMIS). Utilizing these volatile and nonvolatile FeFETs, we constructed a low-power, compact, and all-FeFET computing system for pattern classification tasks, highlighting the potential of transferable BiFeO 3 for low-power memory and computing systems.