Amorphous phase-change memory alloy with no resistance drift

作者：Xiaozhe Wang, Ruobing Wang, Suyang Sun, Xu Ding, Chao Nie, Zhou Zhou, Chenyu Wen, Junying Zhang, Ruixuan Chu, Xueyang Shen, Wen Zhou, Zhitang Song, Jiangjing Wang, E. Ma, Wei Zhang · 发表于：Nature Materials · 年份：2025 · DOI：10.1038/s41563-025-02361-0 · 被引用次数：29 · 研究领域：Phase-change materials and chalcogenides、Advanced Memory and Neural Computing、Transition Metal Oxide Nanomaterials

Abstract Spontaneous structural relaxation is intrinsic to glassy materials due to their metastable nature. For phase-change materials, the resultant temporal change in electrical resistance seriously hampers neuromorphic computing applications. Here we report an ab-initio-calculation-informed design of amorphous phase-change materials composed of robust ‘molecule-like’ motifs, depriving the amorphous alloy of critical structural ingredients responsible for relaxation and, hence, resistance drift. We demonstrate amorphous CrTe 3 thin films that display practically no resistance drift at any working temperature from −200 °C to 165 °C, and highlight the multilevel encoding ability via a hybrid opto-electronic approach. We further reveal that the same no-drift behaviour holds for melt-quenched amorphous CrTe 3 in electronic devices. Moreover, the application potential of CrTe 3 is testified by its incorporation in a vehicle with an automatic path-tracking function. Our work provides an alternative route to achieve requisite properties for potential phase-change neuromorphic computing via the judicious design of disordered phase-change materials.