State-Space Modelling of Schottky Diode Rectifiers Including Parasitic and Coupling Effects up to the Terahertz Band

作者：M. Odiamenhi, Haleh Jahanbakhsh Basherlou, Chan Hwang See, Naser Ojaroudi Parchin, Keng Goh, Hongnian Yu · 发表于：Electronics · 年份：2025 · DOI：10.3390/electronics14183718 · 被引用次数：5 · 研究领域：Superconducting and THz Device Technology、Radio Frequency Integrated Circuit Design、Energy Harvesting in Wireless Networks

A nonlinear state-space model for Schottky diode rectifiers is presented that incorporates junction dynamics, layout parasitic effects, and electromagnetic coupling effects. Unlike prior approaches, the model resolves conduction intervals under harmonic-rich excitation and integrates electromagnetic voltage–current feedback to capture field-induced perturbations at high frequencies. The framework was validated through the design of a 5.8 GHz rectifier, achieving 62% RF–DC efficiency at −10 dBm into a 500 Ω load, with close agreement between the simulation and measurement. The results confirm the model’s predictive accuracy and its utility for high-efficiency rectenna systems in microwave and terahertz applications.