Atomic-Scale Defect Reconfiguration via Thermally Induced Structural Ordering for High-Efficiency Sb 2 Se 3 Solar Cells

作者：Yaozhen Li, Ke Qu, Ruihao Jiang, Haonan Wang, Xiaoyu Zhao, Zhenzhong Yang, Bobo Tian, Jiahua Tao, Junhao Chu, Chun‐Gang Duan · 发表于：ACS Nano · 年份：2025 · DOI：10.1021/acsnano.5c10733 · 被引用次数：44 · 研究领域：Semiconductor materials and devices、Semiconductor materials and interfaces、Phase-change materials and chalcogenides

The photovoltaic performance of antimony triselenide (Sb 2 Se 3 ) thin-film solar cells is fundamentally limited by deep-level defects originating from structural disorder, which severely limit carrier lifetimes. Herein, we propose a thermodynamically driven disorder-to-order transition pathway in Sb 2 Se 3 thin films, enabled by a solution-processable MgCl 2 treatment that facilitates atomic-scale defect passivation across the surface, bulk, and bottom regions. First-principles calculations reveal that Mg 2+ and Cl – ions preferentially occupy Sb and Se vacancies, respectively, thereby modulating vacancy concentrations and blocking atomic migration pathways, which effectively reduces the concentration of pre-existing antisite defects. In parallel, the in situ formation of metastable intermediates ( e.g., MgSe –, MgSe 2 –, and Se 37 Cl – ) acts as a kinetic accelerator for microstructural reconstruction, driving the transformation of disordered nanograins into highly oriented, micron-scale single crystals. This synergistic ionic and structural reconfiguration leads to a 10-fold reduction in trap density and extends photocarrier lifetimes from 0.08–2.6 to 2.7–17 μs, substantially mitigating nonradiative recombination. Consequently, vapor-transport-deposited Sb 2 Se 3 solar cells achieve a certified efficiency of 9.31%, establishing a benchmark. This work provides a mechanistic framework that integrates ionic defect chemistry with lattice ordering, offering a generalizable path...