Strain-Enhanced Spin Readout Contrast in Silicon Carbide Membranes

作者：Haibo Hu, Guodong Bian, Ailun Yi, Chunhui Jiang, Junhua Tan, Qi Luo, Bo Liang, Zhengtong Liu, Xinfang Nie, Dawei Lu, Shumin Xiao, Xin Ou, Ádám Gali, Yu Zhou, Qinghai Song · 发表于：Physical Review Letters · 年份：2025 · DOI：10.1103/tdb3-tqfv · 被引用次数：8 · 研究领域：Semiconductor materials and devices、Diamond and Carbon-based Materials Research、Advancements in Semiconductor Devices and Circuit Design

Quantum defects in solids have emerged as a transformative platform for advancing quantum technologies. A key requirement for these applications is achieving high-fidelity single-spin readout, particularly at room temperature for quantum biosensing. Here, we demonstrate through ab initio simulations of a primary quantum defect in 4H silicon carbide that strain is an effective control parameter for significantly enhancing readout contrast. We validate this principle experimentally by inducing local strain in silicon carbide-on-insulator membranes, achieving a readout contrast exceeding 60% while preserving the favorable coherence properties of single spins. Our findings establish strain engineering as a powerful strategy for optimizing coherent spin-photon interfaces in PL6 divacancy centers within silicon carbide membranes and potentially other similar defect systems.