Polarization-enhanced sub-5 nm Janus MoSiGeN4 FET for high-performance and low-power applications

作者：Mi‐Mi Dong, Chuan‐Kui Wang, Xiao‐Xiao Fu, Mingwen Zhao · 发表于：Journal of Material Science and Technology · 年份：2025 · DOI：10.1016/j.jmst.2025.07.066 · 被引用次数：4 · 研究领域：Ferroelectric and Negative Capacitance Devices、Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design