Design of Ultrawideband High-Efficiency GaN-Based Power Amplifiers

作者：Yuchen Wei, Cong Wang, Jihu Li, Jing-Yang Gao, Jin-Yu Wang, Fan‐Yi Meng, Fan Yang, Nam‐Young Kim, Yang Li, Yongle Wu, Qun Wu · 发表于：IEEE Microwave Magazine · 年份：2025 · DOI：10.1109/mmm.2024.3520028 · 被引用次数：1 · 研究领域：GaN-based semiconductor devices and materials、Advanced Power Amplifier Design、Radio Frequency Integrated Circuit Design

This paper provides a comprehensive review of ultra-wideband (UWB) high-efficiency power amplifier (PA) design based on gallium nitride (GaN) technology. It covers key challenges and advancements in three major architectures: reactive matching power amplifiers (RMPAs), distributed power amplifiers (DPAs), and load-modulated balanced amplifiers (LMBAs). The study highlights the trade-offs between bandwidth, efficiency, output power, and gain, which are critical in UWB PA design. Techniques such as reactive impedance matching, load modulation, and continuous-mode operation are discussed in detail, along with innovative methods like the nested-mode PA, sequential load-pull technique, and quasi-MMIC designs. This paper also explores recent developments in DPAs and LMBAs that address limitations in efficiency at power back-off, output power, and gain. Future research directions emphasize miniaturization, integration, and enhanced performance for UWB applications in communication, military, and satellite systems. The insights presented aim to guide researchers in achieving optimal PA designs by balancing conflicting performance metrics.