Heterojunction interfacial metallization effects on carrier dynamics in Te-Se based infrared photodiodes: An atomic-resolution structure–property study

作者：Zunyu Liu, Meng Peng, Ziyang Huang, Yuxuan Hu, Huaiyuan Wang, Maohua Chen, Shuwen Yan, Mingyang Liu, Ning Ma, Jingshu Zhang, Chao Chen, Yihua Gao, Shuangfeng Jia, Jianbo Wang, Luying Li, Jiang Tang · 发表于：Nano Research · 年份：2025 · DOI：10.26599/nr.2025.94908026 · 被引用次数：2 · 研究领域：Chalcogenide Semiconductor Thin Films、Advanced Semiconductor Detectors and Materials、Phase-change materials and chalcogenides

This study investigates the effect of interfacial electric field redistribution caused by interfacial metal phase transition on the performance of Te-Se alloy-based shortwave infrared photodiode under high interfacial stress conditions. Microscopic analysis of the Te 0.6 Se 0.4 /ZnO interface reveals that stress at the boundary induces the diffusion of Se atoms into the ZnO region, leading to the formation of a new Te-rich metallic phase of Te 0.75 Se 0.25 . This metallic phase would significantly impede carrier migration and negatively impact the photoelectric performance of the device. The incorporation of a TeO 2 modified layer would reduce interface stress, and avoid the formation of the metallic phase, which notably reduces dark current and enhances quantum efficiency. This study explores how interfacial stress influences the structure-property relationship of TeSe/ZnO heterojunctions, offering a novel approach to optimizing interface engineering for Te-based infrared detectors.