InGaN-based red LEDs with 682 nm emission and 9.2 % EQE enabled by a stress-relief template

作者：Kun Xing, Hong Zeng, Zhengang Ru, Yun Zhang, Zhengxian Jin, Zhengwei Pan, Xiaolong Jiang, Haifeng Wang, Junhan Cai, Liangyao Lin · 发表于：Journal of Alloys and Compounds · 年份：2025 · DOI：10.1016/j.jallcom.2025.182772 · 被引用次数：10 · 研究领域：GaN-based semiconductor devices and materials、ZnO doping and properties、Ga2O3 and related materials