1T1C 3D HZO FeRAM with High Retention (>125 °C) and High Endurance (>1E13) for Embedded Nonvolatile Memory Application

作者：Yiming Sun, Hao Li, Fangzhou Yu, Jie Zhao, Yue Li, Shengdong Zhang, Min Zhang, Xiufeng Jia, Yahuan Huan, Jianfeng Wu, Tianle Zhang, Zhenlei Wang, Minghao Shao, Diqing Su, Kai Du, Jiuyun Zhu, Juncun Song, Heng Zhang, Hangbing Lv, Jin Xu · 年份：2025 · DOI：10.23919/vlsitechnologyandcir65189.2025.11074853 · 被引用次数：10 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Machine Learning and ELM

We present a high-performance 3D FeRAM test chip with hafnium zirconium oxide (HZO) materials for advanced embedded nonvolatile memory (eNVM) applications. This FeRAM achieves array-level endurance exceeding > 1013cycles, robust data retention over 10 years at 125°C, and stable high-temperature operation. A novel stack design with defect shielding layers (DSL) on both sides of the HZO film effectively suppresses fatigue, imprint, and pinch phenomena, which are common challenges in ferroelectric memories. A 32Mb 1T1C FeRAM test chip was developed by integrating the high-performance ferroelectric capacitor (FeCAP) with a 7-nm HZO film into a 3D trench structure on a 40nm CMOS platform. The memory array demonstrates a memory window of approximately 340 mV at -5.2σ(0.1ppm), maintaining above 200 mV after 1011writes/1013reads, and 125°C baking operation. These results highlight the significant potential of this eFeRAM to replace eFlash in industrial-level eNVM applications, offering enhanced performance and reliability.