A Heterogeneous CMOS Chip Monolithically Integrating Monolayer MoS 2 for Enhanced NUV Detection: A Scalable Platform Leveraging 2D Materials to Complement and Surpass Silicon

作者：Xiaochen Wang, Hao Ning, Jiangming Lin, Yongliang Xie, Youshui He, Yuan Ma, Srikrishna Chanakya Bodepudi, Bin Yu, Yang Xu · 年份：2025 · DOI：10.23919/vlsitechnologyandcir65189.2025.11074859 · 被引用次数：1 · 研究领域：2D Materials and Applications、Graphene research and applications、Advanced biosensing and bioanalysis techniques

A gap persists between the remarkable properties of 2D materials and their realization in chips, demanding integration strategies that unlock 2D-CMOS complementarity to surpass silicon. We present a 2D-CMOS heterogeneous chip and this approach demonstrates a paradigm that combines the properties of 2D materials with the established advantages of CMOS as a large-scale chip foundation. Our chip seamlessly integrates the intrinsic properties of monolayer$\text{MoS}_{2}$, particularly high-gain and low-noise, enabling superior nearultraviolet performance over mainstream silicon-based chips. This integration complements and transcends the limitations of silicon chips. Our chip achieves a 257 % quantum efficiency at 375 nm and a detectivity ($\mathrm{D}^{\ast}$) exceeding 1013Jones under weak illumination, maintaining an effective signal-to-noise ratio (SNR) of 3 dB at 0.4 pW ultra-low light intensity. Compared to state-of-the-art 2D-materials integration, our design reduces fabrication complexity, enhances scalability, and achieves a high degree of CMOS integration, yielding substantial performance improvements. These results establish a scalable integration platform, bridging the gap between emerging materials and practical chip implementations.