Improvement of the performance of Cu 2 ZnSn(S,Se) 4 solar cells by annealing Li-doped Cu 2 ZnSnS 4 precursor films in air

作者：Yuting Sun, Bin Yao, Yuhong Jiang, Yongfeng Li, Xiaobo Du, Zhanhui Ding, Jiayong Zhang, Chunkai Wang, Ding Ma, Mengge Li, Yan Zhu, Xiaofei Sun, Ning Ding, Liyuan Shi · 发表于：Journal of Materials Chemistry A · 年份：2025 · DOI：10.1039/d5ta03482e · 被引用次数：6 · 研究领域：Chalcogenide Semiconductor Thin Films、Semiconductor materials and interfaces、Quantum Dots Synthesis And Properties

The PCE of the CZTSSe solar cell was enhanced from 9.06% to 10.21% by optimizing the Li doping content, and then further increased from 10.21% to 11.13% by adjusting the annealing temperature and time of CZTS doped with the optimal Li content in air.