Investigation of High-Temperature Diamond UV Photodetectors With MSM and SBD Structure Fabricated by Selectively Grown Method

作者：Zhangcheng Liu, Jia Li, Fei Wang, Wenqian Wang, Zining Li, Jie You, Zhiwei Chen, Li Yang, Xiao Wang, Jinping Ao · 发表于：IEEE Sensors Journal · 年份：2025 · DOI：10.1109/jsen.2025.3588097 · 被引用次数：6 · 研究领域：Diamond and Carbon-based Materials Research、Surface Modification and Superhydrophobicity

This work systematically investigated the high-temperature performance of 3-D diamond ultraviolet (UV) photodetectors with metal–semiconductor–metal (MSM) and Schottky barrier diode (SBD) structures fabricated via a selective epitaxial growth method. The introduction of tungsten-related shallow impurity levels ($\Delta {E}~\approx ~0.32$eV) during selective growth within the diamond’s forbidden gap endowed the film with semiconducting properties, enabling temperature-dependent conductivity. At room temperature, the SBD detector demonstrated superior performance in the forward bias state, achieving a responsivity of 2162 A/W under a forward bias of 10 V, a${R} _{{220}\,\text {nm}}$/${R} _{{400}\, \text {nm}}$rejection ratio of 113, a rise time of 0.117 s, and a fall time of 4.4 s, which were better than those under reverse bias conditions and those of the MSM detector. When operating at$300~^{\circ }$C, the SBD detector at forward bias state maintained exceptional stability, delivering an ultrahigh responsivity of 82612 A/W while retaining a high rejection ratio (164) and rapid rise time (0.053 s), albeit with a slightly prolonged fall time (5.83 s). In contrast, the MSM detector suffered from a slower temporal response at elevated temperatures, and the SBD detector at reverse state had a low responsivity and a fluctuating temporal response easily submerged by thermal noise. These results highlighted the robustness of the selective epitaxial growth method for fabricating 3-D d...